Optical devices with heavily doped multiple quantum wells
US6891187B2 · kind B2 · utility
6Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Apr 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.