Semiconductor component having field-shaping regions

US6891204B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Heinrich Brunner · Dorfen, DE
• Franz Auerbach · Soest, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Mar 23, 2001
• Grant date: May 10, 2005
• Expiry date: Apr 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.