Self-aligned nanotube field effect transistor and method of fabricating same
US6891227B2 · kind B2 · utility
113Cited by
7References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 20, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/94
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.