Semiconductor device alignment mark having oxidation prevention cover film
US6891277B2 · kind B2 · utility
1Cited by
12References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 29, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Nov 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, include an insulating film, a groove formed in the insulating film during a step of defining a contactor hole in a device part, a metal film formed at least on sidewalls of the groove during a step of burying the contactor hole in the device part, and a cover film formed on the insulating film to cover the metal film formed in the groove for prevention of oxidation of the metal film during heat treatment applied in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.