Power-saving reading of magnetic memory devices
US6891768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Dec 24, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0057
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Power-saving reading of magnetic memory devices. In one arrangement, a method includes pulsing a voltage on the array, and obtaining a voltage value indicative of a memory state of the target memory cell from the voltage pulse using a sensing circuit that is electrically connected to the target memory cell. In another arrangement, a method includes pulsing an array voltage on a plurality of row and column conductors of the array, connecting a sensing circuit to a conductor that is electrically coupled to the target memory cell, the sensing circuit including a sense element, and determining the voltage drop across the sense element of the sensing circuit during the voltage pulse, the voltage drop being indicative of a memory state of the target memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.