Method of preventing short circuits in magnetic film stacks
US6893893B2 · kind B2 · utility
19Cited by
16References
35Claims
0Family size
Inventors
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.