Method for forming a titanium nitride layer
US6893963B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Apr 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a titanium nitride layer. The method includes the steps of exposing a semiconductor substrate to a reactive gas containing TiCl4 and NH3 for a first deposition to form a layer of titanium nitride on the substrate, at reaction pressure less than 1 torr and temperature less than 500° C.; placing the semiconductor substrate in NH3 gas for a first annealing step, at pressure between 1 and 3 torr; exposing the semiconductor substrate to a reactive gas comprising TiCl4 and NH3 for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and subjecting the semiconductor substrate to a second annealing step in NH3 gas, at pressure exceeding 5 torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.