POWERCHIP SEMICONDUCTOR CORP.
268Patents
64Active
268Granted
46Portfolio score
Filing activity: Sep 6, 1996 → Sep 18, 2009 · 64 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5736446A | Method of fabricating a MOS device having a gate-side air-gap structure | Emerging Cross-Sectional Technologies | 138 | Expired |
| US5995438A | Synchronous semiconductor memory device | Physics | 100 | Expired |
| US5936903A | Synchronous semiconductor memory device | Physics | 84 | Expired |
| US5747377A | Process for forming shallow trench isolation | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6444574B1 | Method for forming stepped contact hole for semiconductor devices | Electricity | 54 | Expired |
| US6069057A | Method for fabricating trench-isolation structure | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5773348A | Method of fabricating a short-channel MOS device | Electricity | 45 | Expired |
| US6635533B1 | Method of fabricating flash memory | Electricity | 41 | Expired |
| US5670397A | Dual poly-gate deep submicron CMOS with buried contact technology | Electricity | 39 | Expired |
| US5973632A | Sub-range flash analog-to-digital converter | Electricity | 29 | Expired |
| US5851897A | Method of forming a dram cell with a crown-fin-pillar structure capacitor | Electricity | 25 | Expired |
| US7071061B1 | Method for fabricating non-volatile memory | Electricity | 25 | Expired |
| US6794710B2 | Split-gate flash memory structure and method of manufacture | Electricity | 24 | Expired |
| US6639836B1 | Method for reading flash memory with silicon-oxide/nitride/oxide-silicon (SONOS) structure | Physics | 24 | Expired |
| US7208796B2 | Split gate flash memory | Electricity | 24 | Expired |
| US5825710A | Synchronous semiconductor memory device | Physics | 23 | Expired |
| US5723373A | Method of making porous-Si capacitors for high density drams cell | Electricity | 22 | Expired |
| US7679163B2 | Phase-change memory element | Electricity | 22 | Active |
| US7660147B2 | Programming method for phase change memory | Physics | 21 | Active |
| US6898126B1 | Method of programming a flash memory through boosting a voltage level of a source line | Physics | 20 | Expired |
| US7166513B2 | Manufacturing method a flash memory cell array | Physics | 20 | Expired |
| US5933742A | Multi-crown capacitor for high density DRAMS | Electricity | 19 | Expired |
| US6745102B1 | Automatic transporting system and method for operating the same | Performing Operations; Transporting | 18 | Expired |
| US5721168A | Method for forming a ring-shape capacitor | Electricity | 17 | Expired |
| US7569845B2 | Phase-change memory and fabrication method thereof | Electricity | 15 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.