Method of manufacturing a semiconductor device by RTA process in nitrogen atmosphere
US6893981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.