Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same
US6893982B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a thin film on a gate electrode reduces oxidation of the gate electrode during a re-oxidation process to fix the damage to the gate oxide film caused during the formation of the gate electrode pattern. The gate electrode pattern formed in this manner will have reduced defects after re-oxidation. After a gate oxide film is formed on a substrate, a gate electrode pattern is formed on the gate oxide film through an etching process. A thin film that includes nitride is then continuously formed on the gate oxide film and on the gate electrode by utilizing a deposition rate difference between the thin film on the gate oxide film and on the thin film forming the gate electrode. Because of the thin film formed on the gate electrode, oxidation of the gate electrode is reduced during the re-oxidation of the gate oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.