Diode having a double implanted guard ring
US6894318B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
The present invention provides a diode 200 that includes a substrate 215 doped with a first type dopant and a double implanted guard ring 245 located within the substrate and doped with a second type dopant opposite the first type dopant and having a first doped profile region 245a and a second doped profile region 245b. The present invention also includes a method of manufacturing this diode and an integrated circuit that utilizes this diode 200 within a CMOS and bipolar transistor integrated circuit 600.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.