MIM capacitor having flat diffusion prevention films

US6894331B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takashi Yoshitomi · Iwakuni, JP
• Tatsuya Ohguro · Yokohama, JP
• Ryoji Hasumi · Yokohama, JP
• Hideki Kimijima · Yokohama, JP
• Takashi Yamaguchi · Suwa, JP
• Masahiro Inohara · Fujisawa, JP

Key dates

• Filing date: Dec 13, 2000
• Grant date: May 17, 2005
• Expiry date: Dec 13, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.