Semiconductor device
US6894346B2 · kind B2 · utility
31Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/83
Abstract
A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p+ gate and an n+ source are contiguous. An insulating film is formed on the surface of an n− channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.