Bipolar junction transistor with a counterdoped collector region

US6894366B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Gregory E. Howard · Dallas, US
• Jeffrey A. Babcock · Neufahrn, DE
• Angelo Pinto · Augusta, IT
• Scott Balster · Dallas, US

Key dates

• Filing date: Sep 28, 2001
• Grant date: May 17, 2005
• Expiry date: Mar 11, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53

Abstract

An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector region WCD (90) to be reduced leading to an improvement in Ft/Fmax.