Semiconductor element having protruded bump electrodes
US6894387B2 · kind B2 · utility
3Cited by
17References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.