Dual source lithography for direct write application
US6894762B1 · kind B1 · utility
6Cited by
1References
31Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 17, 2002 |
| Grant date | May 17, 2005 |
| Priority date | — |
| Expiry date | May 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31757
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A dual exposure source lithography system forms a first and a second portion of a pattern on a wafer. An optical lithography module forms the first portion of the pattern. A non-optical lithography module forms the second portion of the pattern using a non-optical lithography exposure source. The non-optical exposure source is an electron beam lithography source, an EUV source, an x-ray source, or another next generation lithography system exposure source. A mask design file is decomposed into separate design files reflecting critical and non-critical components of the pattern to be formed on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.