Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
US6896729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.