Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films
US6896975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2002 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Jan 4, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin-valve sensor with pinning layers comprising multiple antiferromagnetic films is disclosed. The multiple antiferromagnetic films are preferably selected from the same Mn-based (Ni—Mn or Pt—Mn) alloy system. The Mn content of the antiferromagnetic film in contact with the reference layer of the spin-valve sensor is selected in order to maximize its exchange coupling to the reference layer, thereby providing a high unidirectional anisotropy field for proper sensor operation. The Mn content of the other antiferromagnetic films not in contact with the reference layer of the spin-valve sensor is reduced in order to maximize the thermal stability and corrosion resistance of the spin-valve sensor for robust sensor operation at high temperatures in disk drive environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.