Method of reducing the conductivity of a semiconductor and devices made thereby
US6897132B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 22, 2002 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiO2 on the semiconductor layer; annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2; and removing the region of SiO2 after the annealing step is performed. The method can be used, for example, during the manufacture of HEMT, PHEMT, MESFET and HBT devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.