Second gallium nitride layers that extend into trenches in first gallium nitride layers
US6897483B2 · kind B2 · utility
14Cited by
39References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2003 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | May 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.