Darren Thomson
15Patents
9h-index
18Co-inventors
65Inventor score
Filing activity: Nov 24, 1998 → Feb 26, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6177688A | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates | Electricity | 475 | Expired |
| US6255198A | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby | Electricity | 165 | Expired |
| US6265289A | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby | Electricity | 123 | Expired |
| US7195993B2 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches | Electricity | 68 | Expired |
| US6489221B2 | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates | Electricity | 44 | Expired |
| US6376339B2 | PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY | Electricity | 40 | Expired |
| US6602764B2 | Methods of fabricating gallium nitride microelectronic layers on silicon layers | Electricity | 37 | Expired |
| US6462355B1 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Electricity | 35 | Expired |
| US6897483B2 | Second gallium nitride layers that extend into trenches in first gallium nitride layers | Electricity | 14 | Expired |
| US7217947B2 | Semiconductor light source and method of making | Electricity | 7 | Expired |
| US7378684B2 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Electricity | 3 | Expired |
| US7371282B2 | Solid solution wide bandgap semiconductor materials | Chemistry; Metallurgy | 2 | Active |
| US7855108B2 | Semiconductor heterojunction devices based on SiC | Electricity | 0 | Active |
| US7525099B2 | Nuclear radiation detection system | Physics | 0 | Active |
| US7683400B1 | Semiconductor heterojunction devices based on SiC | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.