Patent · US Expired

Porous semiconductor-based optical interferometric sensor

US6897965B2 · kind B2 · utility

17Cited by
6References
16Claims
0Family size

Assignees

Inventors

Key dates

Filing dateMar 16, 2004
Grant dateMay 24, 2005
Priority date
Expiry dateMar 16, 2024

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S436/805
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The measurement of the wavelength shifts in the reflectometric interference spectra of a porous semiconductor substrate such as silicon, make possible the highly sensitive detection, identification and quantification of small analyte molecules. The sensor of the subject invention is effective in detecting multiple layers of biomolecular interactions, termed “cascade sensing”, including sensitive detection of small molecule recognition events that take place relatively far from the semiconductor surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.