Porous semiconductor-based optical interferometric sensor
US6897965B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2004 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Mar 16, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/805
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The measurement of the wavelength shifts in the reflectometric interference spectra of a porous semiconductor substrate such as silicon, make possible the highly sensitive detection, identification and quantification of small analyte molecules. The sensor of the subject invention is effective in detecting multiple layers of biomolecular interactions, termed “cascade sensing”, including sensitive detection of small molecule recognition events that take place relatively far from the semiconductor surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.