Device and method for etching a substrate using an inductively coupled plasma
US6899817B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jul 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and a suitable device for carrying out this method is proposed, for etching a substrate (10), especially a silicon element, with the aid of an inductively coupled plasma (14). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma (14) from reactive particles in a reactor (15). In this connection, the inductively coupled plasma (14) comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil (21) is provided which produces a static or timewise varying magnetic field between the substrate (10) and the ICP source (13). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate (10) and the inductively coupled plasma (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.