Separating apparatus, separating method, and method of manufacturing semiconductor substrate
US6900114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Oct 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T82/16065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.