Method for preventing contact defects in interlayer dielectric layer
US6900118B2 · kind B2 · utility
1Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Dec 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an interlayer dielectric (ILD) layer. A dielectric layer containing boron and phosphorous is formed overlying a substrate. A plasma treatment is subsequently performed on the dielectric layer using argon or nitrogen as a process gas. A capping layer is formed in-situ overlying the dielectric layer to serve as the ILD layer with the dielectric layer. A reflow process is subsequently performed on the ILD layer. A method for preventing formation of etching defects in a contact is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.