Dry etch process to edit copper lines
US6900137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Mar 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeF2 gas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.