Film-forming surface reforming method and semiconductor device manufacturing method
US6900144B2 · kind B2 · utility
4Cited by
4References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.