Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices
US6900468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.