Semiconductor device having divided active regions with comb-teeth electrodes thereon
US6900482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.