Semiconductor device and method for manufacturing the same
US6900483B2 · kind B2 · utility
3Cited by
3References
25Claims
0Family size
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Key dates
| Filing date | Jun 4, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A Schottky diode includes a semiconductor substrate made of 4H—SiC, an epitaxially grown 4H—SiC layer, an ion implantation layer, a Schottky electrode, an ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky electrode and the insulative layer are not in contact with each other, with a gap being provided therebetween, whereby an altered layer does not occur. Therefore, it is possible to suppress the occurrence of a leak current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.