Magnetic random access memory
US6900490B2 · kind B2 · utility
17Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Dec 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.