Inventor · Sagamihara, JP

Minoru Amano

79Patents
19h-index
74Co-inventors
87Inventor score

Filing activity: Jun 20, 1977 → Sep 15, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6765824B2 Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory Physics 113 Expired
US6995962B2 Ferromagnetic double tunnel junction element with asymmetric energy band Physics 107 Expired
US8716817B2 Magnetic memory element and nonvolatile memory device Electricity 97 Active
US6522573B2 Solid-state magnetic memory using ferromagnetic tunnel junctions Physics 53 Expired
US6965138B2 Magnetic memory device and method of manufacturing the same Electricity 42 Expired
US6556473B2 Magnetic memory with reduced write current Electricity 39 Expired
US9025368B2 Magnetic memory element and nonvolatile memory device Electricity 37 Active
US8576616B2 Magnetic element and nonvolatile memory device Electricity 37 Active
US8098514B2 Magnetoresistive element and magnetic memory Emerging Cross-Sectional Technologies 36 Active
US8488375B2 Magnetic recording element and nonvolatile memory device Electricity 36 Active
US8737122B2 Nonvolatile memory device Electricity 33 Active
US6605836B2 Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information Emerging Cross-Sectional Technologies 32 Expired
US8582355B2 Magnetic memory element and nonvolatile memory device Electricity 31 Active
US8508979B2 Magnetic recording element and nonvolatile memory device Electricity 30 Active
US9299918B2 Magnetoresistive element and magnetic memory Electricity 29 Active
US8878317B2 Magnetoresistive element and magnetic memory Electricity 29 Active
US6801414B2 Tunnel magnetoresistance effect device, and a portable personal device Electricity 24 Expired
US6590803B2 Magnetic memory device Physics 23 Expired
US6839206B2 Ferromagnetic double tunnel junction element with asymmetric energy band Physics 20 Expired
US8680632B2 Magnetoresistive element and magnetic memory Electricity 18 Active
US6900490B2 Magnetic random access memory Electricity 17 Expired
US9818464B2 Magnetic memory element and memory device Electricity 17 Active
US8710605B2 Magnetic memory and method of manufacturing the same Electricity 17 Active
US7038939B2 Magneto-resistance effect element and magnetic memory Physics 16 Expired
US6730949B2 Magnetoresistance effect device Electricity 16 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.