Strained channel on insulator device
US6900502B2 · kind B2 · utility
93Cited by
39References
50Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device 10 includes a substrate 12 (e.g., a silicon substrate) with an insulating layer 14 (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer 16 (e.g., SiGe) is disposed on the insulating layer 14 and a second semiconducting material layer 18 (e.g., Si) is disposed on the first semiconducting material layer 16. The first and second semiconducting material layers 16 and 18 preferably have different lattice constants such that the first semiconducting material layer 16 is compressive and the second semiconducting material layer is tensile 18.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.