Semiconductor device test method and semiconductor device tester
US6900645B2 · kind B2 · utility
2Cited by
33References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2004 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2853
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.