Bump bonding method apparatus
US6902101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20309
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230±10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.