Method for plasma etching of high-K dielectric materials
US6902681B2 · kind B2 · utility
12Cited by
18References
12Claims
0Family size
Inventors
Key dates
| Filing date | Jun 26, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Mar 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching high dielectric constant materials (a material with a dielectric constant greater than 4) using a halogen gas, reducing gas, and passivating gas chemistry. An embodiment of the method is accomplished using chlorine, carbon monoxide, and nitrogen to etch and passivate a hafnium dioxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.