Plasma processing apparatus and plasma processing method
US6902683B1 · kind B1 · utility
13Cited by
30References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 μm to 10 μm is applied to the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.