Method of making a semiconductor device having a low K dielectric
US6903004B1 · kind B1 · utility
40Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Dec 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low K dielectric layer and a cap for the low K dielectric layer are formed in situ using the same silicon precursors but at different precursor ratios. The low K dielectric is deposited with precursors that are useful for making a low K dielectric. Trenches are formed in the low K dielectric and are filled by a metal layer. Chemical mechanical processing (CMP) is utilized to remove the metal outside the trench while the cap aids planarity outside the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.