Patent · US Expired

Methods for fabricating a contact for an integrated circuit

US6903009B2 · kind B2 · utility

0Cited by

3References

2Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Ruf · Dresden, DE
Manfred Schneegans · Vaterstetten, DE

Key dates

Filing date	Feb 11, 2003
Grant date	Jun 7, 2005
Priority date	—
Expiry date	Feb 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to one embodiment, a method for fabricating a contact is provided. The method can include a step of depositing a Ti layer in order to completely fill a contact hole and on a surrounding surface of an insulation layer. The method can also include a step of partially converting the Ti layer into a TiN layer in such a manner that a TiN layer is provided on the top side in the contact hole. Further, the method can include a step of polishing back the Ti layer and any remaining TiN layer on the surrounding surface of the insulation layer in a single-stage polishing step.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.