Thin-film transistor device, its manufacturing process, and image display using the device
US6903368B2 · kind B2 · utility
4Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film made of silicon or another IV-group crystals (crystals and mixed crystals of C, Ge, Sn, and Pb) is twice scanned with a laser beam moving in two lateral directions in which crystal grains grow larger in order to form high-quality polycrystals in exact positions in the thin film, while defects uncontrollable by the prior arts are being reduced significantly, to realize a high-quality TFT device. The laser-scanning directions are defined by the crystallization face orientations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.