Semiconductor device, method of making the same and liquid crystal display device
US6903372B1 · kind B1 · utility
12Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.