Semiconductor device
US6903418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.