Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems
US6903422B2 · kind B2 · utility
35Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/49
Abstract
A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.