Silicon wafer
US6905771B2 · kind B2 · utility
6Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Dec 11, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: −0.8×10−3≦4.64×10−24×[Ge]−2.69×10−23×[B]≦1.5×10−3. This can reduce the miss-fit dislocation which might be induced when an epitaxial layer is grown over the silicon wafer that has been added with boron in high concentration. It is to be noted that in the above relational expression, the [B] denotes a boron concentration, while the [Ge] denotes a germanium concentration and a concentration unit is indicated by atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.