Etching a substrate in a process zone
US6905800B1 · kind B1 · utility
25Cited by
69References
54Claims
0Family size
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Nov 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method comprises providing a substrate 105 comprising etch resistant material 210 in a process zone 155, such as an energized gas zone in a process chamber 110. The etch resistant material 210 may comprise a resist material 230 over mask material 240. The process may further comprise removing the etch resistant material 210, such as the resist material 230, in the process zone 155 before etching underlying layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.