Method to form reduced dimension pattern with good edge roughness
US6905811B2 · kind B2 · utility
2Cited by
7References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
As feature sizes approach 0.1 μm or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.