Method and structure for determining a concentration profile of an impurity within a semiconductor layer
US6905893B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | May 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided for determining a concentration profile of an impurity within a layer of a semiconductor topography. The method may include exposing the layer and an underlying layer to oxidizing conditions. In addition, the method may include comparing thickness measurements of total dielectric above the underlying layer taken before and after exposing the topography to oxidizing conditions . In some cases, the comparison may include plotting pre-oxidation thickness measurements versus post-oxidation measurements. In other embodiments, the comparison may include determining differences between the pre-oxidation and post-oxidation thickness measurements and correlating the differences to concentrations of the impurity. In some cases, such a correlation may include subtracting a concentration of the impurity at a first location along the semiconductor topography from a concentration of the impurity at a second location along the semiconductor topography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.