Ultra low dielectric constant thin film
US6905909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.