Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide
US6905927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Oct 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/or a sidewall of the conductive layer pattern, with damage cured therein by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.