Group III-nitride growth on Si substrate using oxynitride interlayer
US6906351B2 · kind B2 · utility
10Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitridation of a native oxide layer. One or more integrated electronic circuits and/or integrated optical or optoelectronic devices can be built on the article.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.